1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 1 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power silicon rectifier diodes, 35 a, 40 a, 60 a description/features ? low leakage current series ? good surge current capability up to 1000 a ? can be supplied to meet stringent military, aerospace, and other high reliability requirements ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? note (1) jedec registered values electrical specifications notes (1) jedec registered values (2) for 1n1183 series and 1n3765 series t c = - 65 c to 190 c ? basic type number indicates ca thode to case. for anode to ca se, add r to part number, e.g., 1n1188r, 1n3766r, 1n1186ra, 1n21 35ra product summary i f(av) 35 a, 40 a, 60 a do-203ab (do-5) major ratings and characteristics parameter test conditions 1n1183 1n3765 1n1183a 1n2128a units i f(av) 35 (1) 35 (1) 40 (1) 60 (1) a t c 140 (1) 140 (1) 150 (1) 140 (1) c i fsm 50 hz 480 380 765 860 a 60 hz 500 (1) 400 (1) 800 (1) 900 (1) i 2 t 50 hz 1140 730 2900 3700 a 2 s 60 hz 1040 670 2650 3400 i 2 ? t 16 100 10 300 41 000 52 500 a 2 ? s v rrm range 50 to 600 (1) 700 to 1000 (1) 50 to 600 (1) 50 to 600 (1) v voltage ratings type number v rrm , maximum repetitive peak reverse voltage (t j = - 65 c to 200 c (2) ) v v rm , maximum direct reverse voltage (t j = - 65 c to 200 c (2) ) v 1n1183 1n1183a 1n2128a 50 (1) 50 (1) 1n1184 1n1184a 1n2129a 100 (1) 100 (1) 1n1185 1n1185a 1n2130a 150 (1) 150 (1) 1n1186 1n1186a 1n2131a 200 (1) 200 (1) 1n1187 1n1187a 1n2133a 300 (1) 300 (1) 1n1188 1n1188a 1n2135a 400 (1) 400 (1) 1n1189 1n1189a 1n2137a 500 (1) 500 (1) 1N1190 1N1190a 1n2138a 600 (1) 600 (1) 1n3765 700 (1) 700 (1) 1n3766 800 (1) 800 (1) 1n3767 900 (1) 900 (1) 1n3768 1000 (1) 1000 (1)
1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 2 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) jedec registered values (2) i 2 t for time t x = i 2 ? t x ? t x forward conduction parameter symbol test conditions 1n1183 1n3765 1n1183a 1n2128a units maximum average forward current ? at case temperature i f(av) 1-phase operation, ? 180 sinusoidal conduction 35 (1) 35 (1) 40 (1) 60 (1) a 140 (1) 140 (1) 150 (1) 140 (1) c maximum peak one cycle non-repetitive surge current i fsm half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with rated ? v rrm applied 480 380 765 860 a half cycle 60 hz sine wave or 5 ms rectangular pulse 500 (1) 400 (1) 800 (1) 900 (1) half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with ? v rrm applied following surge = 0 570 455 910 1000 half cycle 60 hz sine wave or 5 ms rectangular pulse 595 475 950 1050 maximum i 2 t for fusing i 2 t t = 10 ms with rated v rrm applied following surge, initial ? t j = t j maximum 1140 730 2900 3700 a 2 s t = 8.3 ms 1040 670 2650 3400 maximum i 2 t for individual ? device fusing t = 10 ms with v rrm = 0 following surge, initial ? t j = t j maximum 1610 1030 4150 5250 t = 8.3 ms 1470 940 3750 4750 maximum i 2 ? t for individual ? device fusing i 2 ? t (2) t = 0.1 to 10 ms, ? v rrm = 0 following surge 16 100 10 300 41 500 52 500 a 2 ? s maximum peak forward voltage ? at maximum forward current (i fm ) v fm t j = 25 c 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) v 110 110 126 188 a maximum average ? reverse current v rrm = 700 i r(av) maximum rated i f(av) and t c -5.0 (1) -- ma v rrm = 800 - 4.0 (1) -- v rrm = 900 - 3.0 (1) -- v rrm = 1000 - 2.0 (1) -- maximum rated i f(av) , v rrm and t c 10 (1) -2.5 (1) 10 (1)
1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 3 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) jedec registered values (2) recommended for pa ss-through holes (3) recommended fo r holed threaded heatsinks fig. 1 - maximum allowable case temperature vs. average forward current, 1n1183 and 1n3765 series fig. 2 - typical low le vel forward power loss vs. average forward current (sinusoidal current waveform), 1n1183 and 1n3765 series thermal and mechanical specifications parameter symbol test condition s 1n1183 1n3765 1n1183a 1n2128a units maximum operating ? case temperature range t c - 65 to 190 (1) - 65 to 200 c maximum storage temperature range t stg - 65 to 175 (1) - 65 to 200 maximum internal thermal resistance, junction to case r thjc dc operation 1.00 (1) 1.1 (1) 0.65 (1) c/w thermal resistance, ? case to sink r thcs mounting surface, smooth, flat and greased 0.25 maximum allowable ? mounting torque ? (+ 0 %, - 10 %) not lubricated thread, tighting on nut (2) 3.4 (30) n m (lbf in) lubricated thread, tighting on nut (2) 2.3 (20) not lubricated thread, tighting on hexagon (3) 4.2 (37) lubricated thread, ti ghting on hexagon (3) 3.2 (28) approximate weight 17 g 0.6 oz. case style jedec do-203ab (do-5)
1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 4 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical high level forward power loss vs. average forward current (sinusoidal current waveform), 1n1183 and 1n3765 series fig. 4 - typical forward voltage vs. forward current, 1n1183 and 1n3765 series fig. 5 - maximum non-repe titive surge current vs. number of current pulses, 1n1183 and 1n3765 series fig. 6 - average forward current vs. maximum allowable case temperature, 1n1183a series fig. 7 - maximum low le vel forward power loss vs. average forward current, 1n1183a series fig. 8 - maximum high le vel forward power loss vs. average forward current, 1n1183a series
1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 5 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum forward voltage vs. forward current, 1n1183a series fig. 10 - maximum non-repe titive surge current vs. number of current pulses, 1n1183a series fig. 11 - maximum non-repe titive surge current vs. number of current pulses, 1n2128a series fig. 12 - maximum allowable case temperature vs. average forward current, 1n2128a series fig. 13 - maximum low le vel forward power loss vs. average forward current, 1n2128a series fig. 14 - maximum high le vel forward power loss vs. average forward current, 1n2128a series
1n1183, 1n3765, 1n1183a, 1n2128a series www.vishay.com vishay semiconductors revision: 04-dec-12 6 document number: 93492 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - maximum forward voltage vs. forward current, 1n2128a series links to related documents dimensions www.vishay.com/doc?95360
document number: 95360 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 29-sep-08 1 do-203ab (do-5) for 1n1183, 1n3765, 1n1183a , 1n2128a, 1n3208 series outline dimensions vishay semiconductors dimensions in millimeters (inches) 1/4" 28unf-2a for metric devices: m6 x 1 ? 14.6 (0.57) 4 (0.16) min. ? 4.10 (0.16) ? 3.80 (0.15) 25.4 (1.0) max. 1.0 (0.04) max. 17.40 (0.68) min. across flats 6.1 (0.24) 7.0 (0.28) 10.7 (0.42) 11.5 (0.45) 10.8 (0.43) 11.4 (0.45) 1.03 (0.04) max.
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